Document
PD - 97452
AUTOMOTIVE GRADE
Features
l l l l l l l
HEXFET® Power MOSFET
D
AUIRFR4104 AUIRFU4104
40V 5.5mΩ 119A 42A
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
V(BR)DSS RDS(on) max. ID (Silicon Limited)
G S
ID (Package Limited)
www.DataSheet4U.com Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D S
D-Pak AUIRFR4104
G D
G
I-Pak AUIRFU4104
S
D G
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw
Max.
119 84 42 480 140 0.95 ± 20 145 310 See Fig.12a, 12b, 15, 16 -55 to + 175
Units
A
Ã
h
d
W W/°C V mJ A mJ °C
g
300 10 lbf in (1.1N m)
Thermal Resistance
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient
y
y
j
Parameter
Typ.
––– ––– –––
Max.
1.05 40 110
Units
°C/W
i
HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/10/2010
AUIRFR/U4104
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS
www.DataSheet4U.com
Min. Typ. Max. Units
40 ––– ––– 2.0 58 ––– ––– ––– ––– ––– 0.032 4.3 ––– ––– ––– ––– ––– ––– ––– ––– 5.5 4.0 ––– 20 250 200 -200
Conditions
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 42A V VDS = VGS, ID = 100µA S VDS = 10V, ID = 42A µA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 59 19 24 17 69 37 36 4.5 7.5 2950 660 370 2130 590 850 89 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– nC
Conditions
ID = 42A VDS = 32V VGS = 10V VDD = 20V ID = 42A RG = 6.8 Ω VGS = 10V Between lead,
Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
e e
ns
nH
6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 32V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 32V
pF
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
f
Min. Typ. Max. Units
––– ––– ––– ––– ––– ––– ––– ––– 28 24 42 A 480 1.3 42 36 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 42A, VGS = 0V TJ = 25°C, IF = 42A, VDD = 20V di/dt = 100A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
AUIRFR/U4104
Qualification Information†
Automotive (per AEC-Q101) Qualifi.