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AUIRF2804 Dataheets PDF



Part Number AUIRF2804
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet AUIRF2804 DatasheetAUIRF2804 Datasheet (PDF)

AUTOMOTIVE GRADE PD -96290 Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D AUIRF2804 AUIRF2804S AUIRF2804L 40V max. 2.0mΩk 1.5mΩk 270A c V(BR)DSS RDS(on) typ. G S ID (Silicon Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest www.DataSheet4U.

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AUTOMOTIVE GRADE PD -96290 Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D AUIRF2804 AUIRF2804S AUIRF2804L 40V max. 2.0mΩk 1.5mΩk 270A c V(BR)DSS RDS(on) typ. G S ID (Silicon Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest www.DataSheet4U.com processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D D ID (Package Limited) 195A D G D S G D S G D S TO-220AB AUIRF2804 G D2Pak AUIRF2804S D TO-262 AUIRF2804L S Absolute Maximum Ratings Gate Drain Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 270 190 195 1080 300 2.0 ± 20 540 1160 c Units A d W W/°C V mJ A mJ d e e d See Fig.12a,12b,15,16 -55 to + 175 °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Thermal Resistance RθJC RθCS RθJA Mounting torque, 6-32 or M3 screw Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient l Parameter Typ. ––– 0.50 ––– ––– Max. 0.50 ––– 62 40 Units °C/W RθJA Junction-to-Ambient (PCB Mount, steady state) HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ j www.irf.com 1 02/19/10 AUIRF2804/S/L Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) SMD RDS(on) TO-220 VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 40 ––– ––– ––– 2.0 130 ––– ––– ––– ––– Typ. Max. Units ––– 0.031 1.5 1.8 ––– ––– ––– ––– ––– ––– ––– ––– 2.0 2.3 4.0 ––– 20 250 200 -200 Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 75A ** mΩ VGS = 10V, ID = 75A ** V VDS = VGS, ID = 250µA S VDS = 10V, ID = 75A ** VDS = 40V, VGS = 0V µA VDS = 40V, VGS = 0V, TJ = 125°C VGS = 20V nA VGS = -20V f f www.DataSheet4U.com Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units 160 41 66 13 120 130 130 4.5 7.5 6450 1690 840 5350 1520 2210 240 62 99 ––– ––– ––– ––– ––– nH ––– ––– ––– ––– ––– ––– ––– nC Conditions ID = 75A ** VDS = 32V VGS = 10V VDD = 20V ID = 75A ** RG = 2.5Ω VGS = 10V Between lead, Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. f f ns D 6mm (0.25in.) from package G pF S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 32V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 32V g Diode Characteristics Parameter IS ISM VSD trr Qrr ton Notes:  Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.(Refer to AN-1140) http://www.irf.com/technical-info.


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