Power MOSFET
AUTOMOTIVE GRADE
PD - 97460
Features
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AUIRF1404Z AUIRF1404ZS AUIRF1404ZL
HEXFET® Power MOSFET
V(BR)DSS R...
Description
AUTOMOTIVE GRADE
PD - 97460
Features
l l l l l l l
AUIRF1404Z AUIRF1404ZS AUIRF1404ZL
HEXFET® Power MOSFET
V(BR)DSS RDS(on) max. ID (Silicon Limited) 40V 3.7mΩ 180A 160A
Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
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G S
ID (Package Limited)
D D
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Description
Specifically designed for Automotive applications, www.DataSheet4U.com this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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G TO-220AB AUIRF1404Z
D
S G
D
S G D
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D2Pak AUIRF1404ZS
TO-262 AUIRF1404ZL
G Gate
D Drain
S Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and s...
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