Rev 3: Nov 2004
AO4916, AO4916L( Green Product ) Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky ...
Rev 3: Nov 2004
AO4916, AO4916L( Green Product ) Dual N-Channel Enhancement Mode Field Effect
Transistor with
Schottky Diode
General Description
The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A
Schottky diode is co-packaged in www.DataSheet4U.com parallel with the synchronous MOSFET to boost efficiency further. AO4916L ( Green Product ) is offered in a lead-free package.
Features
VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V)
SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A
D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K
D2
G1 S1
A
G2 S2
SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current
B A
MOSFET 30 ±20 8.5 6.6 40
Schottky
Units V V A
VGS TA=70°C ID IDM VKA TA=25°C
A
Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead Thermal Characteristics
Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
C A A C B
TA=70°C TA=25°C TA=70°C
IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 2 1.28 -55 t...