AO4914A

AO4914A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4914A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard product AO4914A is Pb-free (meets ROHS & Sony 259 specifications). AO4914AL is a Green Product www.DataSheet4U.com ordering option. AO4914A and AO4914AL are electrically identical. Features Q1 Q2 VDS (V) = 30V VDS(V) = 30V ID = 8.5A (VGS = 10V) ID = 8.5A (VGS = 10V) RDS(ON) < 18mΩ <18mΩ (VGS = 10V) RDS(ON) < 28mΩ <28mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A S1/A G1 S2 G2 1 2 3 4 8 7 6 5 D1/K D1/K D2 D2 Q1 D1 K D2 Q2 SOIC-8 G1 S1 A G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward A Current TA=25°C TA=70°C B Max Q1 30 ±20 8.5 6.6 30 2 1.28 -55 to 150 Max Q2 30 ±20 8.5 6.6 30 2 1.28 -55 to 150 Units V V A VGS TA=25°C TA=70°C ID IDM PD TJ, TSTG Symbol VDS IF IFM PD TJ, TSTG W °C Units V A Maximum Schottky 30 3 2.2 20 2 1.28 -55 to 150 Pulsed Diode Forward Current Power Dissipation A...