AO4912

AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4912 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard Product AO4912 is Pb-free (meets ROHS & Sony 259 specifications). AO4912L is a Green Product www.DataSheet4U.com ordering option. AO4912 and AO4912L are electrically identical. Features Q1 VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 25mΩ Q2 VDS(V) = 30V ID=7A (VGS = 10V) <26mΩ (VGS = 10V) <31mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K D2 Q1 G1 S1 A Q2 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C A Current TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward A Current TA=25°C TA=70°C B Max Q1 30 ±20 8.5 6.8 40 2 1.28 -55 to 150 Max Q2 30 ±12 7 6.4 30 2 1.28 -55 to 150 Units V V A VGS ID IDM PD TJ, TSTG Symbol VDS IF IFM PD TJ, TSTG W °C Units V A Maximum Schottky 30 3 2.2 20 2 1.28 -55 to 150 Pulsed Diode Forward Current Power Dissipation A TA=25°C TA=70°C Junction and...