AO4900A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO4900A uses...
AO4900A Dual N-Channel Enhancement Mode Field Effect
Transistor with
Schottky Diode
General Description
The AO4900A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A
Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4900A is Pbwww.DataSheet4U.com free (meets ROHS & Sony 259 specifications). AO4900AL is a Green Product ordering option. AO4900A and AO4900AL are electrically identical.
Features
VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V)
SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A
D2 S2/A G2 S1 G1 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1 G2 S2 K
D1
SOIC-8
A
G1 S1
Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain CurrentA Pulsed Drain Current
B
MOSFET 30 ±12 6.9 5.8 40
Schottky
Units V V A
VGS TA=70°C ID IDM VKA TA=25°C
A
Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient
C A B
TA=70°C TA=25°C TA=70°C
IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 2 1.44 -55 to 150 Typ 55 90 40 47.5 71 32
30 3 2 40 2 1.44 -55...
