Super Junction MOSFET
APT94N60L2C3
600V 94A 0.035Ω
Super Junction MOSFET
C O OLMOS
Power Semiconductors
TO-264 Max
• Ultra low RDS(ON) • Lo...
Description
APT94N60L2C3
600V 94A 0.035Ω
Super Junction MOSFET
C O OLMOS
Power Semiconductors
TO-264 Max
Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated www.DataSheet4U.com TO-264 Max Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL
dv/ dt
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT94N60L2C3 UNIT Volts Amps
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
600 94 282 ±20 ±30 833 6.67 -55 to 150 300 50 20 1
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy
7 7
Volts Watts W/°C °C V/ns Amps mJ
IAR EAR EAS
Single Pulse Avalanche Energy
1800
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.03 1.0 0.035 50 500 ±200 2.10 3 3.9
(VGS = 10V, 60A)
Ohms µA nA Volts
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5.4mA)
CAUTION: These Dev...
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