Document
K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) • EMRS cycle with address key programs - Partial Array Self Refresh ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 ) • Internal Temperature Compensated Self Refresh • All inputs except data & DM are sampled at the positive going edge of the system clock(CK). www.DataSheet4U.com • Data I/O transactions on both edges of data strobe, DM for masking. • Edge aligned data output, center aligned data input. • No DLL; CK to DQS is not synchronized. • LMD, UMD for write masking only. • Auto refresh duty cycle - 7.8us for -25 to 85 °C
Mobile DDR SDRAM
2. Operating Frequency
DDR333 Speed @CL2 Speed @CL3
NOTE: 1) CAS Latency
1) 1)
DDR266 83Mhz 133Mhz
83Mhz 166Mhz
3. Address configuration
Organization 64Mx16
- DM is internally loaded to match DQ and DQS identically.
Bank Address BA0,BA1
Row Address A0 - A13
Column Address A0 - A9
4. Ordering Information
Part No. K4X1G163PC-L(F)E/GC6 K4X1G163PC-L(F)E/GC3 Max Freq. 166MHz(CL=3),83MHz(CL=2) 133MHz(CL=3),83MHz(CL=2) Interface LVCMOS Package 60FBGA Pb (Pb Free)
- L(F)E : 60FBGA Pb(Pb Free), Normal Power, Extended Temperature(-25 °C ~ 85 °C) - L(F)G : 60FBGA Pb(Pb Free), Low Power, Extended Temperature(-25 °C ~ 85 °C) - C6/C3 : 166MHz(CL=3) / 133MHz(CL=3) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
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November 2007
K4X1G163PC - L(F)E/G
5. FUNCTIONAL BLOCK DIAGRAM
Mobile DDR SDRAM
16
LWE LDM
I/O Control
CK, CK
Data Input Register Serial to parallel
Bank Select
32
16Mx16
Output Buffer 2-bit prefetch
www.DataSheet4U.com
Sense AMP
Refresh Counter Row Buffer
Row Decoder
16Mx16 16Mx16 16Mx16
32
16
X16
DQi
Address Register
CK, CK ADD
Column Decoder
LCBR LRAS Col. Buffer
Latency & Burst Length
Strobe Gen.
Data Strobe
LCKE
Programming Register LRAS LCBR LWE LCAS LWCBR
LDM
Timing Register
DM Input Register
C.