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IRGB5B120KD

INSULATED GATE BIPOLAR TRANSISTOR

Description

PD - 94385E IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. www.DataSheet4U.com Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. TO-220 Package. C VCES...

International Rectifier

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