BF776

High Performance NPN Bipolar RF Transistor High performance low noise amplifier Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz For a wide range of non automotive applications such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE and ISM bands Easy to use standard package with visible leads Pb-free (RoHS compliant) package 3 4 BF776 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF776 Marking Pin Configuration R3s 1=B 2=E 3=C 4=E - - Package SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 90°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TA TStg Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS 1TS is measured on the emitter lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance Value 4.0 3.5 13 13 1.2 50 3 200 150 -55 ... 150 -55 ... 150 Value ≤ 300 Unit V mA mW °C Unit K/W 2010-04-06 1 BF776 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 5 V, VBE = 0 Collector-bas...