ME4542

www.DataSheet4U.com ME4542 N- and P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4542 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● 30V/6.9A,RDS(ON)=25mΩ@VGS=10V (N-Ch) ● 30V/5.8A,RDS(ON)=40mΩ@VGS=4.5V (N-Ch) ● -30V/-6.1A,RDS(ON)=35mΩ@VGS=-10V (P-Ch) ● -30V/-5.1A, RDS(ON)=58mΩ@ VGS=-4.5V (P-Ch) ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(tJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Energy with Single Pulse Maximum Power Dissipation Operating Junction Temperature Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case *The device mounted on 1in2 FR4 board with 2 oz copper Symbol VDS...