H55S1G22MFP-A3

www.DataSheet4U.com 1GBit MOBILE SDR SDRAMs based on 8M x 4Bank x32 I/O Specification of 1Gb (32Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 8,388,608 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / Jun. 2008 1 www.DataSheet4U.com 1Gbit (32Mx32bit) Mobile SDR Memory H55S1G(2/3)2MFP Series Document Title 4Bank x 8M x 32bit Synchronous DRAM 11 Revision History Revision No. 0.1 0.2 1.0 1.1 1.2 Initial Draft Modify : IDD5 : 100mA --> 120mA IDD6 (@45oC, Full Bank) : 450uA --> 500uA Final Version Modify : IDD6 (@45oC, Full Bank) : 500uA --> 450uA IDD6 (@85oC, One Bank) : 550uA --> 500uA Modify : tRAS ( MHz/133Mhz: 42ns/45ns) History Draft Date Sep. 2007 Jan. 2008 Mar. 2008 May 2008 Jun. 2008 Remark Preliminary Preliminary Rev 1.2 / Jun. 2008 2 www.DataSheet4U.com 1Gbit (32Mx32bit) Mobile SDR Memory H55S1G(2/3)2MFP Series DESCRIPTION The Hynix H55S1G(2/3)2MFP is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs. The Hynix 1Gb Mobile SDRAM is 1,073,741,824-bit CMOS Mobile Synchronous DRAM(Mobile SDR), ideally suited for the main memory applications which requires large memory density and high bandwidth. It is organized as 4banks of 8,398,608x32. Mobile SDRAM is a type of DRAM...