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VI40100G Dataheets PDF



Part Number VI40100G
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VI40100G DatasheetVI40100G Datasheet (PDF)

New Product V40100G, VF40100G, VB40100G & VI40100G www.DataSheet4U.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance 2 V40100G PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100G PIN 1 PIN 3 PIN 2 2 3 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (fo.

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New Product V40100G, VF40100G, VB40100G & VI40100G www.DataSheet4U.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance 2 V40100G PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100G PIN 1 PIN 3 PIN 2 2 3 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS TO-263AB K K TO-262AA 2 1 1 VB40100G PIN 1 PIN 2 K HEATSINK 2 3 For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum VI40100G PIN 1 PIN 3 PIN 2 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 100 V 200 A 0.67 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) per device per diode SYMBOL VRRM IF(AV) IFSM VAC TJ, TSTG V40100G VF40100G VB40100G VI40100G UNIT V A A V °C 100 40 20 200 1500 - 40 to + 150 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 min Operating junction and storage temperature range Document Number: 88970 Revision: 19-May-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product V40100G, VF40100G, VB40100G & VI40100G Vishay General Semiconductor www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown Voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A IF = 10 A IF = 20 A IF = 5 A IF = 10 A IF = 20 A VR = 70 V Reverse current per diode (2) VR = 100 V Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms TA = 25 °C TA = 25 °C VF TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C 0.42 0.54 0.67 12 8 IR 55 21 0.73 500 35 µA mA µA mA SYMBOL VBR TYP. 100 (minimum) 0.49 0.59 0.75 MAX. 0.81 UNIT Instantaneous forward voltage per diode (1) V THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RθJC V40100G 2.0 VF40100G 5.0 VB40100G 2.0 VI40100G 2.0 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-262AA PREFERRED P/N V40100G-E3/4W VF40100G-E3/4W VB40100G-E3/4W VB40100G-E3/8W VI40100G-E3/4W UNIT WEIGHT (g) 1.88 1.75 1.39 1.39 1.46 PACKAGE CODE 4W 4W 4W 8W 4W BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube DELIVERY MODE Tube Tube Tube Tape and reel Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 18 Resistive or Inductive Load D = 0.8 16 Average Forward Rectified Current (A) Average Power Loss (W) 40 VF40100G 30 VB(I)40100G 14 12 10 8 6 4 2 D = 0.1 D = 0.3 D = 0.2 D = 0.5 D = 1.0 20 T 10 D = tp/T 0 5 10 15 20 tp 25 0 0 25 50 75 100 125 150 175 0 Case Temperature (°C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88970 Revision: 19-May-08 New Product V40100G, VF40100G, VB40100G & VI40100G www.DataSheet4U.com Vishay General Semiconductor 100 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) Junction to Case TA = 150 °C 10 TA = 125 °C 1 1 TA = 25 °C V(B,I)40100G 0.1 0.01 0.1 1 10 100 0.1 0 0.2 0.4 0.6 0.8 1 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Figure 6. Typical Transient Thermal Impedance 100 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) TA = 150 °C Junction to Case 10 TA = 125 °C 1 0.1 TA = 25 °C 0.01 VF40100G 1 0.01 0.1 1 10 100 0.001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 7. Typical Transient Thermal Impedance 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) 1000 100 0.1 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Document Number: 88970 Revision: 19-Ma.


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