• Small size by using simple matching circuit board
• Single Supply Voltage
• Heat sink 99.9% copper, gold plated
• High Productivity
• Low Manufacturing Cost
• GaAs HFET
• Cellular Repeater
• RF Sub-Systems
• Base Station
The power amplifier module is designed for base stations and cell extenders and
operating frequency range is from 300MHz to 2.3GHz
GaAs HFET is used and attached on a copper sub carrier. It is connected by
using bias and in/out matching circuit method with gold wire bonding.
The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because
GaAs HFET is operated by low supply voltage whereas others are operated by high supply voltage.
For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink.
This simplicity results cost competitiveness and performance enhancement.
Package : DP-56
PARAMETER Min Typ
Frequency Range (MHz)
Small Signal Gain (dB)
Gain Flatness (Max.)
Gain Variation Over Temp
Output Return Loss
CDMA Power (1 FA)
OIP3 @ tone / 27 dBm
Operating Temp Range
824 ~ 849
± 0.5dB @ 50MHz BW
32dBm @ -45dBc ACPR
-20°C ~ +70°C
32.0 × 44 × 10.1 [mm]
* CDMA : 1.23MHz symbol rate ; Forward Link ; 9 Channels, Multi tone Available
@ ±750KHz and ±1.98MHz offset in 30KHz resolution bandwidth
* RFW Series : Internally Matched Module
▪ Tel : 82-31-250-5011
▪ All specifications may change without notice.
▪ Version 1.2