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IS45S16100E

Integrated Silicon Solution

512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM

IS42S16100E IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JUNE 2010 FEATURES • Clock freq...


Integrated Silicon Solution

IS45S16100E

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IS42S16100E IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JUNE 2010 FEATURES Clock frequency: 200, 166, 143 MHz Fully synchronous; all signals referenced to a positive clock edge Two banks can be operated simultaneously and independently Dual internal bank controlled by A11 (bank select) Single 3.3V power supply LVTTL interface Programmable burst length – (1, 2, 4, 8, full page) Programmable burst sequence: Sequential/Interleave 2048 refresh cycles every 32ms (Com, Ind, A1 grade) or 16ms (A2 grade) Random column address every clock cycle Programmable CAS latency (2, 3 clocks) Burst read/write and burst read/single write operations capability Burst termination by burst stop and precharge command Byte controlled by LDQM and UDQM Packages: 400-mil 50-pin TSOP-II and 60-ball TF-BGA Temperature Grades: Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive A1 (-40oC ...




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