512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS42S16100E IS45S16100E
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
JUNE 2010
FEATURES
• Clock freq...
Description
IS42S16100E IS45S16100E
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
JUNE 2010
FEATURES
Clock frequency: 200, 166, 143 MHz
Fully synchronous; all signals referenced to a positive clock edge
Two banks can be operated simultaneously and independently
Dual internal bank controlled by A11 (bank select)
Single 3.3V power supply
LVTTL interface
Programmable burst length – (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
2048 refresh cycles every 32ms (Com, Ind, A1 grade) or 16ms (A2 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command
Byte controlled by LDQM and UDQM
Packages: 400-mil 50-pin TSOP-II and 60-ball TF-BGA
Temperature Grades: Commercial (0oC to +70oC) Industrial (-40oC to +85oC)
Automotive A1 (-40oC ...
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