P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP6679GH/J
RoHS-compliat Product
Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple D...
Description
www.DataSheet4U.com
AP6679GH/J
RoHS-compliat Product
Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 9mΩ -75A
Description
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications.
G D S G D S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1 3
Rating -30 +25 -75 -50 -300 89 0.71 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.4 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
1 200811053
www.DataSheet4U.com
AP6679GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=-250uA
Min. -30 -1 -
Typ. -0.03
Max. Units 9 15 -3 -1 -25 +100 67 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns...
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