RTR030P02

www.DataSheet4U.com RTR030P02 Transistors Switching (−20V, −3.0A) RTR030P02 zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). zExternal dimensions (Unit : mm) TSMT3 0.3~0.6 0~0.1 (1) Gate (2) Source (3) Drain 2.9±0.1 0.1 0.4 + −0.05 1.0MAX. 0.85±0.1 0.7±0.1 (3) 2.8±0.2 zApplication Power switching, DC / DC converter. 0.2 1.6 + −0.1 (1) 0.95 0.95 1.9±0.2 (2) 0.1 0.16 + −0.06 zStructure Silicon P-channel MOS FET Each lead has same dimensions Abbreviated symbol : TV zPackaging specifications Package Type RTR030P02 Code Basic ordering unit (pieces) Taping TL 3000 zEquivalent circuit (3) (1) ∗2 ∗1 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −20 ±12 ±3.0 ±12 −0.8 −3.2 1.0 150 −55 to 150 Unit V V A A A A W °C °C (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE zThermal resistance (Ta=25°C) Parameter Channel to ambient Symbol Rth (ch-A) Limits 125 Unit °C / W 1/4 www.DataSheet4U.com RTR030P02 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 IDSS Zero gate voltage drain current − VGS (th) −0.7 Gate threshold...