RTR025N05

www.DataSheet4U.com 2.5V Drive Nch MOSFET RTR025N05 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TSMT3 1.0MAX 2.9 0.4 0.85 0.7 (1) (2) 0.95 0.95 1.9 0.16 (1) Gate (2) Source Each lead has same dimensions Abbreviated symbol : PW zApplication Switching (3) Drain zPackaging specifications Package Type RTR025N05 Code Basic ordering unit (pieces) Taping TL 3000 zInner circuit (3) ∗2 (1) zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 45 ±12 ±2.5 ±10 0.8 10 1.0 150 −55 to +150 Unit V V A A A A W °C °C ∗1 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board zThermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board Symbol Rth (ch-a) ∗ Limits 125 Unit °C / W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.06 - Rev.A 0.3~0.6 zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). (3) 1.6 2.8 0~0.1 RTR025N05 zElectrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistan...