FQP19N20C

FQP19N20C / FQPF19N20C — N-Channel QFET® MOSFET FQP19N20C / FQPF19N20C N-Channel QFET® MOSFET 200 V, 19 A, 170 mΩ November 2013 Features 19 A, 200 V, RDS(on) = 170 mΩ (Max.) @ VGS = 10 V, ID = 9.5 A Low Gate Charge (Typ. 40.5 nC) Low Crss (Typ. 85 pF) 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D GDS TO-220 G GDS TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) -Continuous (TC = 1...