FQB19N20C

FQB19N20C — N-Channel QFET® MOSFET FQB19N20C N-Channel QFET® MOSFET 200 V, 19 A, 170 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features 19.0 A, 200 V, RDS(on) = 170 mΩ (Max.) @ VGS = 10 V, ID = 9.5 A Low Gate Charge (Typ. 40.5 nC) Low Crss (Typ. 85 pF) 100% Avalanche Tested RoHS Compliant D D G S D2-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM VGSS EAS IAR EAR dv/dt Drain Current - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt PD Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds S (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FQB19N20CTM 200 19.0 12.1 76.0 ± 30 433 19.0 13.9 5.5 3.13 139 1.11 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W W/°C ...