IS61C3216AL

IS61C3216AL 32K x 16 HIGH-SPEED CMOS STATIC RAM JANUARY 2020 FEATURES High-speed access time: 12 ns Low Active Power: 175 mW (typical) Low Standby Power: 1 mW (typical) CMOS standby TTL compatible interface levels Single 5V ± 10% power supply Fully static operation: no clock or refresh required Available in 44-pin SOJ package and 44-pin TSOP (Type II) Commercial and Industrial temperature ranges available Lead-free available DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61C3216AL is packaged in the JEDEC standard 44pin 400-mil SOJ and 44-pin TSOP (Type II). FUNCTIONAL BLOCK DIAGRAM A0-A14 DECODER 32K x 16 MEMORY ARRAY VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT COLUMN I/O CE OE CONTROL WE CIRCUIT UB LB Copyright © 2020 Integrated Silicon Solution, Inc. All rights reserved. ISSI...