IXFK72N20

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 72N20 80N20 72N20 80N20 VDSS IXFK72N20 IXFK80N20 ID25 RDS(on) 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns Maximum Ratings 200 200 ±20 ±30 72 80 288 320 74 45 5 360 -55 ... +150 150 -55 ... +150 300 0.9/6 10 V V V V A A A A A mJ V/ns W °C °C °C °C Nm/lb.in. g TO-264 AA G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features International standard packages Molding epoxies meet UL 94 V-0 flammability classification Low RDS (on) HDMOSTM process Unclamped Inductive Switching (UIS) rated Fast intrinsic rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 35 30 V V nA mA mA mW mW DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS =...