PMWD26UN

PMWD26UN Rev. 02 — 19 May 2005 www.DataSheet4U.com Dual N-channel µTrenchMOS ultra low level FET Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Surface-mounted package s Very low threshold voltage s Low profile s Fast switching 1.3 Applications s Portable appliances s Battery management s PCMCIA cards s Load switching 1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 3.1 W s ID ≤ 7.8 A s RDSon ≤ 30 mΩ 2. Pinning information Table 1: Pin 1 2, 3 4 5 6, 7 8 Pinning Description drain1 (D1) source1 (S1) gate1 (G1) gate2 (G2) source2 (S2) drain2 (D2) 1 4 S1 G1 S2 G2 msd901 Simplified outline 8 5 Symbol D1 D2 SOT530-1 ((TSSOP8) Philips Semiconductors PMWD26UN www.DataSheet4U.com Dual N-channel µTrenchMOS ultra low level FET 3. Ordering information Table 2: Ordering information Package Name PMWD26UN TSSOP8 Description plastic thin shrink small outline package; 8 leads; body width 4.4 mm Version SOT530-1 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM [1] Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 Tsp = 100 °C; VGS = 4.5 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 [1] [1] [1] [1] Min −55 −55 - Max 20 20 ±10 7.8 4...