PMWD22XN

PMWD22XN Rev. 01 — 15 August 2005 www.DataSheet4U.com Dual N-channel µTrenchMOS extremely low level FET Product data sheet 1. Product profile 1.1 General description Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Low threshold voltage s Fast switching s Common drain 1.3 Applications s Portable appliances s Battery management 1.4 Quick reference data s VDS ≤ 20 V s RDSon ≤ 26 mΩ s ID ≤ 9.2 A s QGD = 2.7 nC (typ) 2. Pinning information Table 1: Pin 1, 8 2, 3 4 5 6, 7 Pinning Description drain (D) source1 (S1) gate1 (G1) gate2 (G2) source2 (S2) G1 S1 G2 S2 mbl600 Simplified outline 8 5 Symbol D D 1 4 SOT530-1 (TSSOP8) Philips Semiconductors PMWD22XN www.DataSheet4U.com Dual N-channel µTrenchMOS extremely low level FET 3. Ordering information Table 2: Ordering information Package Name PMWD22XN TSSOP8 Description plastic thin shrink small outline package; 8 leads; body width 4.4 mm Version SOT530-1 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM [1] Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Tsp = 25 °C; VGS = 4.5 V; see Figure 2 and 3 Tsp = 100 °C; VGS = 4.5 V; see Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tsp = 25 °C; see Figure 1 [1] [1] [1] [1] Min −55 −55 Max 20 20 ±12 9.2 5.8 37 3.5 +150 +150 2.9 11.9 U...