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PMWD18UN

NXP Semiconductors
Part Number PMWD18UN
Manufacturer NXP Semiconductors
Description Dual N-channel uTrenchMOS ultra low level FET
Published Apr 27, 2010
Detailed Description com PMWD18UN M3D647 Dual N-channel µTrenchMOS™ ultra low level FET Rev. 02 — 23 February 2004 Product ...
Datasheet PDF File PMWD18UN PDF File

PMWD18UN
PMWD18UN

Overview
com PMWD18UN M3D647 Dual N-channel µTrenchMOS™ ultra low level FET Rev.
02 — 23 February 2004 Product data 1.
Product profile 1.
1 Description Dual common drain N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.
2 Features s Surface mounted package s Very low threshold s Low profile s Fast switching.
1.
3 Applications s Portable appliances s Battery management s PCMCIA cards s Load switching.
1.
4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 2.
3 W s ID ≤ 7.
8 A s RDSon ≤ 21.
5 mΩ.
2.
Pinning information Table 1: Pin 1,8 2,3 4 5 6,7 Pinning - SOT530-1 (TSSOP8), simplified outline and symbol Description drain (d) source1 (s1) gate...


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