MTDK3S6R

CYStech Electronics Corp. ESD protected N-CHANNEL MOSFET Spec. No. : C447S6R www.DataSheet4U.com Issued Date : 2009.06.03 Revised Date : Page No. : 1/6 MTDK3S6R Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package BVDSS ID RDSON 20V 100mA 3Ω Symbol MTDK3S6R Outline SOT-363 Tr1 Tr 2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Ta=25°C) Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. 200mW per element must not be exceeded *3. Human body model, 1.5kΩ in series with 100pF Symbol BVDSS VGS ID IDM PD Tj Rth,ja Limits 20 ±8 100 400 *1 300 *2 350 *3 -55~+150 415 Unit V V mA mA mW V °C °C/W MTDK3S6R CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) Min. 20 0.5 100 Typ. 1.7 3.5 Max. 1.0 ±1 500 3 6 50 25 5 1 Unit V V μA nA Ω mS Spec. No. : C447S6R www.DataSheet4U.com Issued Date : 2009.06.03 Revised Date : Page No. : 2/6 Test Conditions VGS=0, ID=100μA VDS=VGS, ID=250μA VGS=±8V, VDS=0 VDS=20V, VGS=0 VGS=4.5V, ID=100mA VGS=1.8V, ID=20mA VDS=5V, ID=100mA GFS Dynamic Ciss Coss Crss Source-Drain Diode *VSD - pF VDS=10V, VGS=0, f=1MHz V ...