RMPA5252

RMPA5252 4.9–5.9 GHz InGaP HBT WLAN Linear Power Amplifier Preliminary www.DataSheet4U.com March 2005 RMPA5252 4.9–5.9 GHz InGaP HBT WLAN Linear Power Amplifier Features ■ Full 4.9 to 5.9GHz operation ■ 34dB small signal gain ■ 3% EVM at 18dBm modulated power out ■ 3.3V single positive supply operation ■ Integrated power detector with 20dB dynamic range ■ Lead-free RoHS compliant 3 x 3 x 0.9 mm leadless package ■ Internally matched to 50 Ohms and DC blocked RF input/ output ■ Optimized for use in 802.11a applications General Description The RMPA5252 power amplifier is designed for high performance WLAN applications in the 4.9–5.9 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. An on-chip detector provides power sensing capability. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. Device Electrical Characteristics1 802.11a OFDM Modulation (with 176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter Frequency Collector Supply Voltage Mirror Supply Voltage Mirror Supply Current Gain Total Current @ 18dBm POUT EVM @ 18dBm POUT2 Detector Output @ 18dBm POUT Detector Threshold3 Notes: 1. VCC = 3.3V, VM12, VM34 = 2.4V, TA = 25°C, PA is constantly biased, 50¾ system. 2. Percentage includes system noise floor of EVM = 0...