IXFH30N40Q

www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 30N40Q IXFT 30N40Q VDSS ID25 RDS(on) = 400 V = 30 A = 0.16 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 400 400 ±20 ±30 30 120 30 30 1.5 5 300 -55 to +150 150 -55 to +150 V V V V A A A mJ mJ V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S (TAB) G = Gate D = Drain S = Source TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 300 1.13/10 Nm/lb.in. 6 4 g g Features l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 400 2.0 4.0 ± 100 TJ = 25°C TJ = 125°C 25 1 0.16 V V nA mA mA W l l l VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V l IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % E...