Document
POWER MANAGEMENT Description
The SC1218 is a high speed, robust, dual output driver to drive high-side and low-side N-MOSFETs in synchronous buck converters. Combined with Semtech’s multi-phase PWM controller SC2649, one can build high performance, versatile voltage regulators for next generation microprocessors. SC1218 is built upon a CMOS technology which provides enough voltage capacity to handle computer applications. In addition, the advanced timing circuitry is adopted to filter out very narrow PWM pulses at the input of the driver. The latched UVLO and enhanced adaptive shoot-through protection further enhance the robustness of the SC1218. With integrated bootstrap diode, the SC1218 is offered in both SOIC-8 package and MLPQ-8 3x3mm package. These features further reduce the thermal stress and BOM cost.
High Speed Synchronous MOSFET Driver
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SC1218
Features
Advanced Digital Timing to Filter Out Very Narrow PWM
Pulses +12V Gate Drive Voltage Integrated Bootstrap Diode High Peak Drive Current Adaptive Non-overlapping Gate Drives Provide Shootthrough Protection Support Dynamic VID operation Ultra-low Propagation Delay Floating Top Gate Drive Crowbar Function for Over Voltage Protection High Frequency (up to 2 MHz) Operation Allows Use of Small Inductors and Low Cost Ceramic Capacitors Under Voltage Lockout Low Quiescent Current Enable Function for Both Gate OFF Shut Down Lead-free Part and Fully WEEE and RoHS Compliant
Applications
Intel Next Generation Processor Power Supplies AMD AthlonTM and AMD-K8TM Processor Power Supplies High Current Low Voltage DC-DC Converters
Typical Application Circuit
VIN
Cbst 1uF BST TG DRN PGND BG
Mtop Cin
Rdrn (optional) Mbot
Lout
VOUT
PWM EN Rv in 2R2
CO EN VIN Cv in 1uF
SC1218
Cout
Revision: October 14, 2005
1
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SC1218
POWER MANAGEMENT Absolute Maximum Ratings
Parameter VIN Supply Voltage BST to DRN BST to VIN TG to DRN TG to DRN Pulse BST to PGND BST to PGND Pulse DRN to PGND DRN to PGND Pulse BG to PGND BG to PGND Pulse PWM Input Enable Input Continuous Pow er Dissipation TA=25oC, TJ=125oC Thermal Resistance Junction to Case Junction Temperature Range Storage Temperature Range Lead Temperature (Soldering) 10 Sec. Symbol VI N VBST-DRN VBST-VIN VTG-DRN VTG-DRN-PULSE VBST-PGND VBST-PGND-PULSE VDRN-PGND VDRN-PGND-PULSE VBG-PGND VBG-PGND-PULSE CO EN PD SOIC-8 MLPQ-8 SOIC-8 MLPQ-8 VPEAK w ith tPULSE < 20ns(1) tPULSE <20ns VBST-VDRN = 10V VPEAK w ith tPULSE < 200ns(1) VPEAK w ith tPULSE < 20ns(1) VPEAK w ith tPULSE < 20ns(1) Conditions
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Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied.
Maximum -0.3 to 16 -0.3 to 16 -0.3 to 16 -0.3 to 16 -2 -0.3 to VIN+16 38 -2 to VIN+16 -5 to 35 -8 to 35 -0.3 to VIN+0.3 -3.5 -0.3 to VIN+0.3 -0.3 to VIN+0.3 0.5 2.56 40 8.