K6F8016R6B

K6F8016R6B Family Document Title CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date July 25, 2001 Remark Preliminary 1.0 Finalize October 24, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 October 2001 K6F8016R6B Family FEATURES Process Technology: Full CMOS Organization: 512K x16 Power Supply Voltage: 1.65~2.2V Low Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00 CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION The K6F8016R6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM PRODUCT FAMILY Power Dissipation Product Family K6F8016R6B-F Operating Temperature Industrial(-40~85°C) Vcc Range 1.65~2.2V Speed 701)/85ns Standby (ISB1, Typ.) 0.5µ A2) Operating (ICC1, Max) 2mA PKG Type 48-TBGA-6.00x7.00 1. The paramete...