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K1S321615M

Samsung semiconductor

2Mx16 bit Uni-Transistor Random Access Memory


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K1S321615M Document Title 2Mx16 bit Uni-Transistor Random Access Memory www.DataSheet4U.com UtRAM Revision History Revision No. History 0.0 Initial Draft - Design target Revised - Change package type from FBGA to TBGA. - Improve operating current from 30mA to 25mA. - Change input and output reference voltage from 1.1V to 1.5V at AC test condition. - Expan...



Samsung semiconductor

K1S321615M

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