N-Channel MOSFET
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA 75N10P IXTP 75N10P IXTQ 75N10P
V
= 100 V
DSS
...
Description
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA 75N10P IXTP 75N10P IXTQ 75N10P
V
= 100 V
DSS
ID25
= 75 A
≤ RDS(on)
25 mΩ
TO-263 (IXTA)
Symbol
VDSS VDGR
VGS VGSM
ID25 IDM IAR
E AR
EAS
dv/dt
PD TJ T
JM
Tstg
TL TSOLD M
d
Weight
Test Conditions
TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C
T C
= 25° C
TC = 25° C
I S
≤
I,
DM
di/dt
≤ 100
A/µs,
V DD
≤
V, DSS
T J
≤150° C,
R G
=
10
Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-3P / TO-220)
TO-3P TO-220 TO-263
Maximum Ratings
100
V
100
V
±20
V
±30
V
75
A
200
A
50
A
30
mJ
1.0
J
10
V/ns
360
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
5.5
g
4
g
3
g
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values Min. Typ. Max.
100
V
VGS(th)
VDS = VGS, ID = 250µA
3.0
5.5 V
IGSS
VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
25 µA 250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
21
25 m Ω
G S
TO-220 (IXTP)
(TAB)
G DS TO-3P (IXTQ)
(TAB)
G D S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
l International standard packages l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect
Advantages
l Easy ...
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