DirectFET Power MOSFET
PD - 97239
IRF6638PbF IRF6638TRPbF
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DirectFET Power MOSFET RoHs Compliant Typical values (unle...
Description
PD - 97239
IRF6638PbF IRF6638TRPbF
www.DataSheet4U.com
DirectFET Power MOSFET RoHs Compliant Typical values (unless otherwise specified) l Lead-Free (Qualified up to 260°C Reflow) VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters 30V max ±20V max 2.2mΩ@ 10V 3.0mΩ@ 4.5V l Low Conduction Losses Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l High Cdv/dt Immunity 30nC 11nC 3.2nC 27nC 18.4nC 1.8V l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST MQ MX MT MP
DirectFET ISOMETRIC
Description
The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6638PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total los...
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