IS41LV16105B

IS41LV16105B 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE FEATURES TTL compatible inputs and outputs; tristate I/O Refresh Interval: — 1,024 cycles/16 ms Refresh Mode: — RAS-Only, CAS-before-RAS (CBR), and Hidden JEDEC standard pinout Single power supply: 3.3V ± 10% Byte Write and Byte Read operation via two CAS Extended Temperature Range: -30 C to +85 C Industrial Temperature Range: -40oC to +85oC Lead-free available o o www.DataSheet4U.com ISSI APRIL 2005 ® DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16105B ideal for use in 16-, 32-bit wide data bus systems. These features make the IS41LV16105B ideally suited for highbandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications. The IS41LV16105B is packaged in a 42-pin 400-mil SOJ and 400-mil 44- (50-) pin TSOP (Type II). KEY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. Fast Page Mode Cycle Time (tPC) VDD I/O0 I/O1 I/O2 I/O3 VDD I/O4 I/O5 I/O6 I/O7 NC NC NC WE RAS NC NC A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 GND I/O15 I/O...