SI7431DP_RC

Si7431DP_RC Vishay Siliconix www.DataSheet4U.com R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 10.7022 1.5396 8.1730 44.5852 Ambient 637.7248 m 18.3411 m 63.4993 m 1.8487 Case 548.9235 m 66.0800 m 627.5846 m 257.4119 m Case 10.0502 m 272.6095 u 29.5873 m 81.3733 m Foot N/A N/A N/A N/A Foot N/A N/A N/A N/A Thermal Capacitance (Joules/°C) This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 69750 Revision: 05-Oct-07 www.vishay.com 1 Si7431DP_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION www.DataSheet4U.co...