Document
Si7439DP
New Product
Vishay Siliconix
www.DataSheet4U.com
P-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
−150
FEATURES
ID (A)
−5.2 −5.0
rDS(on) (W)
0.090 @ VGS = −10 V 0.095 @ VGS = −6 V
D TrenchFETr Power MOSFETS D Ultra-Low On-Resistance Critical for Application D Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg and Avalanche Tested
APPLICATIONS
D Active Clamp in Intermediate DC/DC Power Supplies
PowerPAK SO-8
6.15 mm
S 1 2 S 3 S
5.15 mm
S
4 D 8 7 D 6 D 5 D
G
G
Bottom View Ordering Information: Si7439DP-T1—E3
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 0 1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS IAS EAS PD TJ, Tstg
10 secs
Steady State
−150 "20
Unit
V
−5.2 −4.1 −50 −4.2 −40 80 5.4 3.4 −55 to 150
−3.0 −2.4 A −1.6
mJ 1.9 1.2 W _C
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes Document Number: 73106 S-41526—Rev. A, 16-Aug-04 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
18 50 1.0
Maximum
23 65 1.5
Unit
_C/W
1
Si7439DP
Vishay Siliconix
a. Surface Mounted on 1” x 1” FR4 Board.
New Product
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SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −150 V, VGS = 0 V VDS = −150 V, VGS = 0 V, TJ = 70_C VDS = −10 V, VGS = −10 V VGS = −10 V, ID = −5.2 A VGS = −6 V, ID = −5.0 A VDS = −15 V, ID = −5.2 A IS = −4.2 A, VGS = 0 V −30 0.073 0.077 19 −0.78 −1.2 0.090 0.095 −2.0 −4.0 "100 −1 −10 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −2.9 A, di/dt = 100 A/ms VDD = −75 V, RL = 15.5 W ID ^ −4.8 A, VGEN = −10 V, Rg = 6 W 1.5 VDS = −75 V, VGS = −10 V, ID = −5.2 A 88 17.5 26.5 3 25 46 115 64 100 4.5 40 70 180 100 150 ns W 135 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40 35 30 I D − Drain Current (A) 25 20 15 10 5 4V 0 0 2 4 6 8 10 VDS − Drain-to-Source Voltage (V) www.vishay.com −55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS − Gate-to-Source Voltage (V) Document Number: 73106 S-41526—Rev. A, 16-Aug-04 I D − Drain Current (A) VGS = 10 thru 5 V 40 50
Transfer Characteristics
30
20 TC = 125_C 10 25_C
2
Si7439DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.15
Vishay Siliconix
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On-Resistance vs. Drain Current
6000 5000 C − Capacitance (pF) 4000 3000 2000 1000 0 Crss 0 30
Capacitance
r DS(on) − On-Resistance ( W )
0.12
Ciss
0.09
VGS = 6 V VGS = 10 V
0.06
0.03
Coss
0.00 0 10 20 30 40 50
60
90
120
150
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
10 V GS − Gate-to-Source Voltage (V) VDS = 75 V ID = 5.2 A
Gate Charge
2.2 1.9 rDS(on) − On-Resiistance (Normalized) 1.6 1.3 1.0 0.7 0.4 −50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 5.2 A
8
6
4
2
0 0 15 30 45 60 75 90 Qg − Total Gate Charge (nC)
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
40 0.20
On-Resistance vs. Gate-to-Source Voltage
I S − Source Current (A)
10 TJ = 150_C
r DS(on) − On-Resistance ( W )
0.16
0.12 ID = 5.2 A 0.08
1
TJ = 25_C
0.04
0.1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V)
0.00 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V)
Document Number: 73106 S-41526—Rev. A, 16-Aug-04
www.vishay.com
3
Si7439DP
Vishay Siliconix
New Product
www.DataSheet4U.com
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
1.3 1.0 V GS(th) Variance (V) 0.7 0.4 0.1 −0.2 −0.5 −50 40 ID = 250 mA Power (W) 120 200
Single Pulse Power
160
80
−25
0
25
50
75
100
125
150
0 0.001
0.01
0.1 Time (sec)
1
10
TJ − Temperature (_C)
100 Limited by rDS(on)
Safe Operating Area
10 I D − Drain Current (A)
1
10 ms 100 ms
0.1
TC = 25_C Single Pulse
1s 10 s
0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V)
dc 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 .