SUD50N06-12

SUD50N06-12 New Product Vishay Siliconix www.DataSheet4U.com N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES ID (A)c 63 rDS(on) (W) 0.012 @ VGS = 10 V D TrenchFETr Power MOSFET D 175 _C Junction Temperature APPLICATIONS D Automotive and Industrial D TO-252 Drain Connected to Tab G D S G Top View Ordering Information: SUD50N06-12 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current, Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 60 "20 63c 36 100 63c 35 61 107b 3a - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter J Junction-to-Ambient ti t A bi ta Junction-to-Case t v 10 sec Steady State Symbol RthJA RthJC Typical 16 40 1.1 Maximum 20 50 1.4 Unit _C/W Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. c. Calculate continuous current based on maximum allowable junction temperature when using infinite heat sink. Package limitation current is 50 A. Document Number: 72385 S-31920—Rev. A, 15-Sep-03 www.vishay.com 1 SUD50N06-12 Vishay Siliconix New Product www.DataSheet4U.com SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parame...