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SI7913DN

Vishay

Dual P-Channel 20-V (D-S) MOSFET

Si7913DN Vishay Siliconix www.DataSheet4U.com Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.03...


Vishay

SI7913DN

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Si7913DN Vishay Siliconix www.DataSheet4U.com Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.037 @ VGS = −4.5 V −20 0.048 @ VGS = −2.5 V 0.066 @ VGS = −1.8 V FEATURES ID (A) −7.4 −6.5 −5.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package APPLICATIONS D Portable − PA Switch − Battery Switch − Load Switch S S RoHS COMPLIANT PowerPAK 1212-8 3.30 mm S1 1 2 G1 S2 3.30 mm 3 4 G G G2 D1 8 7 D1 D2 D D2 D P-Channel MOSFET 6 5 Ordering Information: Si7913DN-T1—E3 (Lead (Pb)-Free) P-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −20 "8 Unit V −7.4 −5.3 −20 −2.3 2.8 1.5 −55 to 150 260 −5.0 −3.6 A −1.1 1.3 0.85 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 35 75 4 Maximum 44 94 5 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal ...




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