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BAP55L

NXP Semiconductors

Silicon PIN diode

BAP55L Silicon PIN diode Rev. 01 — 5 April 2005 www.DataSheet4U.com Preliminary data sheet 1. Product profile 1.1 Gene...


NXP Semiconductors

BAP55L

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Description
BAP55L Silicon PIN diode Rev. 01 — 5 April 2005 www.DataSheet4U.com Preliminary data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small plastic SMD package. 1.2 Features s High speed switching for RF signals s Low diode capacitance s Low forward resistance s Very low series inductance s For applications up to 3 GHz 1.3 Applications s RF attenuators and switches 2. Pinning information Table 1: Pin 1 2 Discrete pinning Description cathode anode [1] Simplified outline Symbol 1 2 sym006 Transparent top view [1] The marking bar indicates the cathode. 3. Ordering information Table 2: Ordering information Name BAP55L Description leadless ultra small plastic package; 2 terminals; body 1.0 × 0.6 × 0.5 mm Version SOD882 Type number Package Philips Semiconductors www.DataSheet4U.com BAP55L Silicon PIN diode 4. Marking Table 3: BAP55L Marking Marking code E6 Type number 5. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF Ptot Tstg Tj Parameter reverse voltage forward current total power dissipation storage temperature junction temperature Ts = 90 °C Conditions Min −65 −65 Max 50 100 500 +150 +150 Unit V mA mW °C °C 6. Thermal characteristics Table 5: Symbol Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to soldering point Conditions Typ 100 Unit K/W 7. Characteristics Table 6: Characteristics Tj = 25 °C unless otherwise ...




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