64 Mbit (4Mb x 16)/ 104MHz Clock Rate 1.8V Supply - Bare Die Burst PSRAM
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M69KB096AB
64 Mbit (4 Mb x16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM
PRELIMINARY DA...
Description
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M69KB096AB
64 Mbit (4 Mb x16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM
PRELIMINARY DATA
Features summary
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Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers User-selectable Operating Modes – Asynchronous Modes: Random Read, and Write, Page Read – Synchronous Modes: NOR-Flash, Full Synchronous (Burst Read and Write) Asynchronous Random Read – Access Time: 70ns Asynchronous Page Read – Page Size: 4, 8 or 16 Words – Subsequent Read Within Page: 20ns Burst Read – Fixed Length (4, 8, 16 or 32 Words) or Continuous – Maximum Clock Frequency: 104MHz – Output delay: 7ns at 104MHz Low Power Consumption – Active Current: < 25mA – Standby Current: 140µA – Deep Power-Down Current: < 10µA Low Power Features – Partial Array Self-Refresh (PASR) – Deep Power-Down (DPD) Mode – Automatic Temperature-compensated SelfRefresh Operating Temperature – –30°C to +85°C
Wafer
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The M69KB096AB is only available as part of a multi-chip package Product.
November 2005
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Rev 1 1/73
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M69KB096AB
Contents
1 2 Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.1 2.2 2.3 2.4 2.5 ...
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