IS61C64AL

IS61C64AL ® Long-term Support World Class Quality 8K x 8 HIGH-SPEED CMOS STATIC RAM JANUARY 2020 FEATURES High-speed access time: 10 ns CMOS low power operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating TTL compatible interface levels Single 5V power supply Fully static operation: no clock or refresh required Lead-free available DESCRIPTION The ISSI IS61C64AL is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 150 µW (typical) with CMOS input levels. Easy memory expansion is provided by using one Chip Enable input, CE. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61C64AL is packaged in the JEDEC standard 28pin, 300-mil SOJ, and TSOP. FUNCTIONAL BLOCK DIAGRAM A0-A12 VDD GND I/O0-I/O7 DECODER I/O DATA CIRCUIT 8K x 8 MEMORY ARRAY COLUMN I/O CE OE CONTROL CIRCUIT WE Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. ...