IXFK24N90Q

www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C IXFK 24N90Q IXFX 24N90Q VDSS ID25 RDS(on) = = = 900 V 24 A 0.45 W trr £ 250 ns PLUS 247TM (IXFX) Maximum Ratings 900 900 ± 20 ± 30 24 96 24 60 2.5 5 500 -55 ... +150 150 -55 ... +150 300 0.4/6 V V V V G (TAB) D TO-264 AA (IXFK) G A A A mJ J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features l IXYS advanced low Qg process l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Rated for unclamped Inductive load switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density l Symbol Test Conditions Characteristic Val...