HiPerFET Power MOSFET
Advance Technical Data
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HiPerFETTM Power MOSFETs
Q-Class
IXFK 24N120Q2 IXFX 24N120Q2
VDSS = 1200 V...
Description
Advance Technical Data
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HiPerFETTM Power MOSFETs
Q-Class
IXFK 24N120Q2 IXFX 24N120Q2
VDSS = 1200 V = 24 A ID25 RDS(on) = 0.65 Ω trr ≤ 300 ns
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-264 PLUS-247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1200 1200 ± 30 ± 40 24 96 12 30 4.0 20 830 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W °C °C °C °C
G = Gate S = Source
PLUS 247TM (IXFX)
G
D (TAB) D
TO-264 AA (IXFK)
G
D
S
D (TAB) D = Drain TAB = Drain
0.9/6 Nm/lb.in. 6 10 g g
Features
z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 5.0 ± 200 TJ = 25°C TJ = 125°C 50 2 0.65 V V nA µA mA Ω
z z
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V
z z
Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier
Advantages
z z z
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 ...
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