ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
TYPICAL PERFORMANCE CURVES ®
APT15GN120BDQ1 www.DataSheet4U.com APT15GN120BDQ1G*
APT15GN120BDQ1(G) 1200V
*G Denotes R...
Description
TYPICAL PERFORMANCE CURVES ®
APT15GN120BDQ1 www.DataSheet4U.com APT15GN120BDQ1G*
APT15GN120BDQ1(G) 1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
G C E
TO -2 47
Trench Gate: Low VCE(on) Easy Paralleling
1200V Field Stop
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT15GN120BDQ1(G) UNIT Volts
1200 ±30 45 22 45 45A @ 1200V 195 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts °C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) Gate Threshold Voltage (VCE = VGE, I C = 600µA, Tj = 25°C) MIN TYP MAX...
Similar Datasheet