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ATF-531P8

Agilent

Pseudomorphic HEMT

Agilent ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet www.Dat...


Agilent

ATF-531P8

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Description
Agilent ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet www.DataSheet4U.com Features Single voltage operation High linearity and gain Low noise figure Description Agilent Technologies’s ATF-531P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier (LPCC [3]) package. The device is ideal as a high linearity, low-noise, medium-power amplifier. Its operating frequency range is from 50 MHz to 6 GHz. The thermally efficient package measures only 2 mm x 2 mm x 0.75 mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85°C. All devices are 100% RF & DC tested. Note: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Conforms to JEDEC reference outline MO229 for DRP-N 4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. Pin Connections and Package Marking Pin 8 Pin 7 (Drain) Pin 6 Pin 5 Excellent uniformity in product specifications Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source) Source (Thermal/RF Gnd) Small package size: 2.0 x 2.0 x 0.75 mm Point MTTF > 300 years [2] MSL-1 and lead-free Tape-and-reel packagi...




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