NTMFS4921N

NTMFS4921N MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 58.5 A Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package These are Pb−Free Device Applications CPU Power Delivery DC−DC Converters High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA Power Dissipation RqJA (Note 1) Continuous Drain Current 10 sec RqJA v TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C VDSS VGS ID PD ID 30 ±20 13.8 10 2.14 22.4 16.1 Power Dissipation RqJA, t v 10 sec Continuous Drain C(Nuortreen2t)RqJA Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJC Steady State TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C PD ID PD ID 5.61 8.8 6.4 0.87 58.5 42.3 Power Dissipation RqJC (Note 1) Pulsed Drain Current TC = 25°C tp=10ms TA = 25°C PD IDM 38.5 117 Current limited by package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt IDmaxpkg TJ, TSTG IS dV/dt 100 −55 to +150 38.5 6 Unit V V A W A W A W A W A A °C A V/ns http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 6.95 mW @ 10 V 10.8 mW @ 4.5 V ID MAX 58.5 A D (5,6) G (4) S (1,2,3) N−CHANNEL MOSFET 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 MARKING DIAGRAM D S S S 4921N AYWZZ D ...