NTMFS4852N

NTMFS4852N Advance Information Power MOSFET Features www.DataSheet4U.com 30 V, 155 A, Single N−Channel, SO−8 FL Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device V(BR)DSS 30 V http://onsemi.com RDS(ON) MAX 2.1 mW @ 10 V 3.1 mW @ 4.5 V ID MAX 155 A Applications Refer to Application Note AND8195/D CPU Power Delivery DC−DC Converters Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA v 10 sec Power Dissipation RqJA, t v 10 sec Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxpkg TJ, TSTG IS dV/dt EAS PD ID PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 25 18 2.31 40 29 5.95 16 11 0.90 155 112 86.2 310 100 −55 to +150 72 6 360 W A A °C A V/ns mJ W A W A W A Unit V V A D (5,6) G (4) S (1,2,3) N−CHANNEL MOSFET MARKING DIAGRAM D 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 S S S G 4852N AYWWG G D D D A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either loc...