IR2186S

www.DataSheet4U.com Preliminary Data Sheet No. PD60162-L IR2106(S)/IR21064(S) IR2186(S) HIGH AND LOW SIDE DRIVER Features Floating channel designed for bootstrap operation Product Summary VOFFSET 600V max. IO+/120 mA / 250 mA VOUT 10 - 20V 7 - 20V (IR2106(4)) (IR2186) Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V (IR2106(4)) or 6 to 20V (IR2186) Undervoltage lockout for both channels 3.3V, 5V and 15V input logic compatible Matched propagation delay for both channels Logic and power ground +/- 5V offset. Lower di/dt gate driver for better noise immunity Outputs in phase with inputs (IR2106/IR2186) ton/off (typ.) Delay matching 180 ns 50 ns Description The IR2106/IR2186 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Packages 8 Lead SOIC 14 Lead SOIC 8 Lead PDIP 14 Lead PDIP Typical Connection up to 600V VCC VCC HIN LIN VB HO VS LO TO LOAD HIN LIN COM up to 600V IR2106/IR2186 HO VC...