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JDV2S14E Dataheets PDF



Part Number JDV2S14E
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Diode
Datasheet JDV2S14E DatasheetJDV2S14E Datasheet (PDF)

JDV2S14E TOSHIBA Diode Silicon Epitaxial Planar Type www.DataSheet4U.com JDV2S14E Useful for VCO/TCXO • • • Small Package High Capacitance Ratio : C1V/C2.5V = 2.15 (typ.) Low Series Resistance : rs = 0.4 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 −55~125 Unit V °C °C Weight: 0.0014 g 000707EAA1 • TOSHIBA is continually working to improve the quality and reliability of its products. Never.

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JDV2S14E TOSHIBA Diode Silicon Epitaxial Planar Type www.DataSheet4U.com JDV2S14E Useful for VCO/TCXO • • • Small Package High Capacitance Ratio : C1V/C2.5V = 2.15 (typ.) Low Series Resistance : rs = 0.4 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 −55~125 Unit V °C °C Weight: 0.0014 g 000707EAA1 • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 2000-09-11 1/3 JDV2S14E Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Symbol VR IR C0.5V Capacitance C1V C2.5V C4V Capacitance ratio Series resistance C0.5V/C1V C1V/C2.5V rs IR = 1 µA VR = 10 V VR = 0.5 V, f = 1 MHz VR = 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 4 V, f = 1 MHz   VR = 4 V, f = 100 MHz Test Condition Min 10  56.3 44 19 9.2 1.25 1.99  www.DataSheet4U.com Typ.        2.15 0.4 Max  3 64.7 49.5 26.5 12 1.35 2.3 0.8 Unit V nA pF  Ω Note: Signal level when capacitance is measured. Vsig = 500 mVrms Marking FH 2000-09-11 2/3 JDV2S14E www.DataSheet4U.com CV – VR 100 f = 1 MHz Vsig = 500 m Vrms 1.0 0.9 rs – VR f = 100 MHz Capacitance CV (pF) (Ω) Series resistance rs 1 2 3 4 5 6 10 1 0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 1 10 Reverse voltage VR (V) Reverse voltage VR (V) 2000-09-11 3/3 .


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